Author: Kohyama, Susumu, editor:
Title: Very High Speed MOS Devices
Description: Oxford, Clarendon Press, 1990. orig.cloth. 24x16cm, xii,528 pp. Textual photos & diagrams. Binding corner bumps,two small ink marks to bottom page-edge,VG. ¶ Contents: Introductory Remarks; Foundations & Physics of MOS Devices; Process Technology; Process Integration for MOS Devices; BiCMOS Devices; Simulation Technology; MOS Logic Devices; MOS Memory Devices; Future Directions & Technical Issues of MOS Devices.

Keywords: Metal Oxide Semiconductors, Semiconductor, MOS Device, Integrated Circuits, Engineering, Technology, Physics, ,