Author: Yu, E.T. & Manasreh, M.O.; editors:
Title: III-V Nitride Semiconductors: Applications & Devices
Description: New York / London, Taylor & Francis, (2003). orig.boards. 23x15cm, xiv, 700 pp, Series: Optoelectronic Properties of Semiconductors & Superlattices, Volume 16.. Textual photos & graphs.. Minor rubbing. VG. ¶ Contains 14 papers. Includes: Ohmic Contacts to GaN; Characterization of Schottky Contacts on Nitride Semiconductors; Integration of GaN Thin Films with Dissimilar Substrate Materials of Wafer Bonding and Laser Lift-Off; Spontaneous & Piezoelectric Polarization in Nitride Heterostructures; AlGaN/NaN High Electron Mobility Transistors; Two-Dimensional Electron Gas Transport Properties in AlGaN/GaN Heterostructure Field-Effect Transistors;Electron Transport in Wide-Bandgap Semiconductors & Heterostructures; GaN Metal-Semiconductor Field-Effect Transisitor; Piezoelectric Effect in Group-III Nitride-Based Heterostructures and Quantum Wells; AlGaInN MQW Laser Diodes; Blue Vertical Cavity Surface Emitting Lasers and InGaN Quantum Dot Lasers; III-Nitride-Based UV Potodetectors; III-Nitride Ultraviolet Photodetectors; AlGaN UV Photodetectors.

Keywords: Electrical Engineering, III-Nitride, 3-Nitride, Three-Nitride, Semiconductor, Solid State Physics, Optoelectronic, Semiconductors,