Manasreh, M.O. & Ferguson, Ian T.; editors: - III-Nitride Semiconductor Growth [III-Nitride Semiconductors: Growth]

New York / London, Taylor & Francis, (2003). orig.boards. 24x15cm, vi, 675 pp, Series: Optoelectronic Properties of Semiconductors and Superlattices, Volume 19.. Minor rubbing. VG. ¶ Contains 14 papers. Includes: Reduction of Dislocation Density in GaN Films Formed by Epitaxial Lateral Overgrowth; Lateral & Pendeo-Epitaxial Growth & Characterization of Thin Films of GaN and AlGaN Alloys on SiC(0001) and Si(111) Substrates; Spatially Resolved Optical Characterization of GaN Structures Produced by Selective Area Apitaxy and Epitaxial Lateral Overgrowth; Selective Growth of GaN on a-Al2O3 and Si Substrates Using Oxidized AlAs; Homoepitaxial & Heteroepitaxial MOVPE Growth of GaN; Hydride Vapor Phase Epitaxial Growth (HVPE) of Thick GaN Layers; Growth Modes & Strain Relaxation Mechanisms of Nitrides in Molecular Beam Epitaxy:From 2D to 3D Growth Mode; Molecular Beam Epitaxy of Group-III Nitrides; Growth & Characterization of MBE-Grown Cubic GaN InxGa1-xN and AlyGa1-yN; Growth of III-V Nitrides by Pulsed Laser Deposition; Influence of the Growth Mode on the Physical Properties of GaN Grown by Metalorganic Vapor Phase Epitaxy; Epitaxial Growth and Characterisation of GaN-Based Nitrides & Related Devices on Silicon Substrates; Metalorganic Vapor Phase Epitaxy Grown Hexagonal GaN and A1GaN for Ultraviolet Visible-Blind Photodetector Device Applications; Epitaxial Growth of Wurtzite GaN and Ternary Compounds.

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